In this work, we present results of photoluminescence (PL) properties of fully
(p-n) porous silicon device. Porous silicon layer has been prepared by Photoelectrochemical
etching under different etching time of abrupt (p-n) silicon junction.
The photoluminescence spectra, it is found that the formation of fully penetrate porous
silicon layer can lead to decrease in the photoluminescence intensity. The reduction of
the PL intensity is referred to the increase of non- radiative recombination process
between the electron and hole. The obtained fully porous silicon layer in high etching
time regime and this layer cannot be used for perpetration of light emitting devices,
while the partially (p-n) porous silicon layer in the PL intensity has a higher value and
good characteristics, this layer is suitable for (LED).
Keywords: (p-n) porous silicon, PL, photo-electrochemical etching.
|